Nanoscale Transistors Device Physics, Modeling and Simulation /

NANOSCALE TRANSISTORS: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were va...

Celý popis

Uloženo v:
Podrobná bibliografie
Hlavní autoři: Lundstrom, Mark. (Autor, http://id.loc.gov/vocabulary/relators/aut), Guo, Jing. (http://id.loc.gov/vocabulary/relators/aut)
Korporativní autor: SpringerLink (Online service)
Médium: Elektronický zdroj E-kniha
Jazyk:English
Vydáno: New York, NY : Springer US : Imprint: Springer, 2006.
Vydání:1st ed. 2006.
Témata:
On-line přístup:https://doi.org/10.1007/0-387-28003-0
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!
Obsah:
  • Basic Concepts
  • Devices, Circuits, and Systems
  • The Ballistic Nanotransistor
  • Scattering Theory of the MOSFET
  • Nanowire Field-Effect Transistors
  • Transistors at the Molecular Scale.