صورة الغلاف

Vibrational Properties of Defective Oxides and 2D Nanolattices Insights from First-Principles Simulations /

Ge and III–V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials – like graphene and MoS_2 – are also envisioned to replace Si in the future.   This thesis is devoted to the first-principles modeling of the vibrational prop...

وصف كامل

محفوظ في:
التفاصيل البيبلوغرافية
المؤلف الرئيسي: Scalise, Emilio. (مؤلف, http://id.loc.gov/vocabulary/relators/aut)
مؤلف مشترك: SpringerLink (Online service)
التنسيق: الكتروني كتاب الكتروني
اللغة:English
منشور في: Cham : Springer International Publishing : Imprint: Springer, 2014.
الطبعة:1st ed. 2014.
سلاسل:Springer Theses, Recognizing Outstanding Ph.D. Research,
الموضوعات:
Semiconductors.
Optical materials.
Electronic materials.
Mathematical physics.
Electronic circuits.
Surfaces (Physics).
Interfaces (Physical sciences).
Thin films.
Optical and Electronic Materials.
Theoretical, Mathematical and Computational Physics.
Electronic Circuits and Devices.
Surface and Interface Science, Thin Films.
الوصول للمادة أونلاين:https://doi.org/10.1007/978-3-319-07182-4
الوسوم: إضافة وسم
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جدول المحتويات:
  • Introduction
  • Theoretical Methods
  • First-Principles Modelling of Vibrational Modes in Defective Oxides
  • Vibrational Properties of Silicene and Germanene
  • Interaction of Silicene with Non-Metallic Layered Templates
  • Conclusions and Perspectives
  • Appendix for Experimental Techniques.

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