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Vibrational Properties of Defective Oxides and 2D Nanolattices Insights from First-Principles Simulations /

Ge and III–V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials – like graphene and MoS_2 – are also envisioned to replace Si in the future.   This thesis is devoted to the first-principles modeling of the vibrational prop...

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Autor principal: Scalise, Emilio. (Autor, http://id.loc.gov/vocabulary/relators/aut)
Autor corporatiu: SpringerLink (Online service)
Format: Electrònic eBook
Idioma:English
Publicat: Cham : Springer International Publishing : Imprint: Springer, 2014.
Edició:1st ed. 2014.
Periòdiques:Springer Theses, Recognizing Outstanding Ph.D. Research,
Matèries:
Semiconductors.
Optical materials.
Electronic materials.
Mathematical physics.
Electronic circuits.
Surfaces (Physics).
Interfaces (Physical sciences).
Thin films.
Optical and Electronic Materials.
Theoretical, Mathematical and Computational Physics.
Electronic Circuits and Devices.
Surface and Interface Science, Thin Films.
Accés en línia:https://doi.org/10.1007/978-3-319-07182-4
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Taula de continguts:
  • Introduction
  • Theoretical Methods
  • First-Principles Modelling of Vibrational Modes in Defective Oxides
  • Vibrational Properties of Silicene and Germanene
  • Interaction of Silicene with Non-Metallic Layered Templates
  • Conclusions and Perspectives
  • Appendix for Experimental Techniques.

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