Mục lục: Vibrational Properties of Defective Oxides and 2D Nanolattices

Vibrational Properties of Defective Oxides and 2D Nanolattices Insights from First-Principles Simulations /

Ge and III–V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials – like graphene and MoS_2 – are also envisioned to replace Si in the future. This thesis is devoted to the first-principles modeling of the vibrational prop...

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Chi tiết về thư mục
Tác giả chính:	Scalise, Emilio. (Tác giả, http://id.loc.gov/vocabulary/relators/aut)
Tác giả của công ty:	SpringerLink (Online service)
Định dạng:	Điện tử eBook
Ngôn ngữ:	English
Được phát hành:	Cham : Springer International Publishing : Imprint: Springer, 2014.
Phiên bản:	1st ed. 2014.
Loạt:	Springer Theses, Recognizing Outstanding Ph.D. Research,
Những chủ đề:	Semiconductors. Optical materials. Electronic materials. Mathematical physics. Electronic circuits. Surfaces (Physics). Interfaces (Physical sciences). Thin films. Optical and Electronic Materials. Theoretical, Mathematical and Computational Physics. Electronic Circuits and Devices. Surface and Interface Science, Thin Films.
Truy cập trực tuyến:	https://doi.org/10.1007/978-3-319-07182-4
Các nhãn:	Thêm thẻ Không có thẻ, Là người đầu tiên thẻ bản ghi này!

Mục lục:

Introduction
Theoretical Methods
First-Principles Modelling of Vibrational Modes in Defective Oxides
Vibrational Properties of Silicene and Germanene
Interaction of Silicene with Non-Metallic Layered Templates
Conclusions and Perspectives
Appendix for Experimental Techniques.

Vibrational Properties of Defective Oxides and 2D Nanolattices Insights from First-Principles Simulations /

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