Vibrational Properties of Defective Oxides and 2D Nanolattices Insights from First-Principles Simulations /

Ge and III–V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials – like graphene and MoS_2 – are also envisioned to replace Si in the future.   This thesis is devoted to the first-principles modeling of the vibrational prop...

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Bibliografische gegevens
Hoofdauteur: Scalise, Emilio. (Auteur, http://id.loc.gov/vocabulary/relators/aut)
Coauteur: SpringerLink (Online service)
Formaat: Elektronisch E-boek
Taal:English
Gepubliceerd in: Cham : Springer International Publishing : Imprint: Springer, 2014.
Editie:1st ed. 2014.
Reeks:Springer Theses, Recognizing Outstanding Ph.D. Research,
Onderwerpen:
Online toegang:https://doi.org/10.1007/978-3-319-07182-4
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