Vibrational Properties of Defective Oxides and 2D Nanolattices Insights from First-Principles Simulations /

Ge and III–V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials – like graphene and MoS_2 – are also envisioned to replace Si in the future.   This thesis is devoted to the first-principles modeling of the vibrational prop...

Ful tanımlama

Kaydedildi:
Detaylı Bibliyografya
Yazar: Scalise, Emilio. (Yazar, http://id.loc.gov/vocabulary/relators/aut)
Müşterek Yazar: SpringerLink (Online service)
Materyal Türü: Elektronik Ekitap
Dil:English
Baskı/Yayın Bilgisi: Cham : Springer International Publishing : Imprint: Springer, 2014.
Edisyon:1st ed. 2014.
Seri Bilgileri:Springer Theses, Recognizing Outstanding Ph.D. Research,
Konular:
Online Erişim:https://doi.org/10.1007/978-3-319-07182-4
Etiketler: Etiketle
Etiket eklenmemiş, İlk siz ekleyin!