Vibrational Properties of Defective Oxides and 2D Nanolattices Insights from First-Principles Simulations /
Ge and III–V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials – like graphene and MoS_2 – are also envisioned to replace Si in the future. This thesis is devoted to the first-principles modeling of the vibrational prop...
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| 格式: | 电子 电子书 |
| 语言: | English |
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Cham :
Springer International Publishing : Imprint: Springer,
2014.
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| 版: | 1st ed. 2014. |
| 丛编: | Springer Theses, Recognizing Outstanding Ph.D. Research,
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| 在线阅读: | https://doi.org/10.1007/978-3-319-07182-4 |
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