Novel Three-state Quantum Dot Gate Field Effect Transistor Fabrication, Modeling and Applications /
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic...
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| 主要作者: | |
|---|---|
| 企業作者: | |
| 格式: | 電子 電子書 |
| 語言: | English |
| 出版: |
New Delhi :
Springer India : Imprint: Springer,
2014.
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| 版: | 1st ed. 2014. |
| 主題: | |
| 在線閱讀: | https://doi.org/10.1007/978-81-322-1635-3 |
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| LEADER | 03000nam a22004815i 4500 | ||
|---|---|---|---|
| 001 | 978-81-322-1635-3 | ||
| 003 | DE-He213 | ||
| 005 | 20200706151625.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 131120s2014 ii | s |||| 0|eng d | ||
| 020 | |a 9788132216353 |9 978-81-322-1635-3 | ||
| 024 | 7 | |a 10.1007/978-81-322-1635-3 |2 doi | |
| 050 | 4 | |a T174.7 | |
| 072 | 7 | |a TDPB |2 bicssc | |
| 072 | 7 | |a TEC027000 |2 bisacsh | |
| 072 | 7 | |a TDP |2 thema | |
| 082 | 0 | 4 | |a 620.5 |2 23 |
| 100 | 1 | |a Karmakar, Supriya. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 245 | 1 | 0 | |a Novel Three-state Quantum Dot Gate Field Effect Transistor |h [electronic resource] : |b Fabrication, Modeling and Applications / |c by Supriya Karmakar. |
| 250 | |a 1st ed. 2014. | ||
| 264 | 1 | |a New Delhi : |b Springer India : |b Imprint: Springer, |c 2014. | |
| 300 | |a XIV, 134 p. 121 illus., 49 illus. in color. |b online resource. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |b PDF |2 rda | ||
| 505 | 0 | |a Introduction: Multi State Devices and Logic -- Quantum Dot Gate Field Effect Transistor Device Structures -- Quantum Dot Gate Field Effect Transistors Fabrication and Characterization -- Quantum DOT Gate Field Effect Transistors Theory and Device Modeling -- Quantum Dot Gate NMOS Inverter -- Quantum Dot Gate Field Effect Transistor (QDGFET): Circuit Model and Ternary Logic Inverter -- Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) Using Quantum DOT Gate Field Effect Transistor (QDGFET) -- Performance in SUB-25nm Range -- Conclusions. | |
| 520 | |a The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated. | ||
| 650 | 0 | |a Nanotechnology. | |
| 650 | 0 | |a Electronic circuits. | |
| 650 | 1 | 4 | |a Nanotechnology and Microengineering. |0 https://scigraph.springernature.com/ontologies/product-market-codes/T18000 |
| 650 | 2 | 4 | |a Circuits and Systems. |0 https://scigraph.springernature.com/ontologies/product-market-codes/T24068 |
| 650 | 2 | 4 | |a Electronic Circuits and Devices. |0 https://scigraph.springernature.com/ontologies/product-market-codes/P31010 |
| 710 | 2 | |a SpringerLink (Online service) | |
| 773 | 0 | |t Springer Nature eBook | |
| 776 | 0 | 8 | |i Printed edition: |z 9788132216360 |
| 776 | 0 | 8 | |i Printed edition: |z 9788132216346 |
| 776 | 0 | 8 | |i Printed edition: |z 9788132234906 |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-81-322-1635-3 |
| 912 | |a ZDB-2-ENG | ||
| 912 | |a ZDB-2-SXE | ||
| 950 | |a Engineering (SpringerNature-11647) | ||
| 950 | |a Engineering (R0) (SpringerNature-43712) | ||