Electrochemical Deposition and Characterization of Copper Indium Disulfide Semiconductor Thin Films
Copper indium disulfide (CuInS2) has attracted much interest as absorber layer in photovoltaic cellapplications because of its direct band gap energy of ~1.5 eV, high conversion efficiency, high absorption coefficient and free from hazardous chalcogenides, selenium or tellurium. In this work, three...
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| Materyal Türü: | Tez |
| Dil: | English English |
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2011
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| Online Erişim: | http://psasir.upm.edu.my/id/eprint/19881/1/FS_2011_40_ir.pdf |
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