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Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques

Deposition of tin seleno telluride thin film on fluorine doped tin oxide (FTO) coated glass was successfully carried out by potentiostatic deposition and pulse electrodeposition methods. The deposition process was done in an acidic bath consisting of Sn-EDTA, Na2SeO3 and TeO2 solutions. Deposition p...

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主要作者: Chia, Chew Ping
格式: Thesis
语言:English
出版: 2015
主题:
Electroplating
Thin films
Thin film devices
在线阅读:http://psasir.upm.edu.my/id/eprint/57067/1/FS%202015%206RR.pdf
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spelling oai:psasir.upm.edu.my:57067 http://psasir.upm.edu.my/id/eprint/57067/ Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques Chia, Chew Ping Deposition of tin seleno telluride thin film on fluorine doped tin oxide (FTO) coated glass was successfully carried out by potentiostatic deposition and pulse electrodeposition methods. The deposition process was done in an acidic bath consisting of Sn-EDTA, Na2SeO3 and TeO2 solutions. Deposition potential was initially determined using cyclic voltammetry (CV), where the CV results indicated that the possible potential range for deposition of tin seleno telluride is between -0.35 V to -0.65 V. In potentiostatic deposition, the effect of deposition potential, annealing temperature,deposition time, bath temperature and bath concentration were studied. Comparison was done based on the results obtained from photoelectrochemical test (PEC) and Xray diffraction (XRD). It was found that tin seleno telluride thin film which was deposited for 40 minutes at -0.40 V in a deposition bath containing 0.010 M Sn-EDTA,0.010 M Na2SeO3 and 0.005 M TeO2 at room temperature exhibited the highest photocurrent and has the good crystallinity. It was also observed that the tin seleno telluride thin film was produced when the sample was annealed at 250 °C. Pulse electrodeposition was carried out for 40 minutes at a potential of -0.40 V vs Ag/AgCl in a solution containing 0.010 M Sn-EDTA, 0.010 M Na2SeO3 and 0.005 M TeO2. The sample was annealed at 250 oC for 30 minutes. The effect of varying duty cycle was studied. PEC and XRD results showed that tin seleno telluride deposited at 50% duty cycle produced a thin film with high crystallinity and good photoresponse. The photocurrent for the thin film deposited using both methods appeared at negative potentials region, revealing the fact that tin seleno telluride is a p-type semiconductor. The XRD results showed that tin seleno telluride (SnSe0.3Te0.7) is polycrystalline with strong cubic structure reflections at (002), (022), (222), (004) and (024) planes. Micrographs obtained from Scanning Electron Microscopy (SEM) showed that the thin film deposited using potentiostatic deposition appeared as non-uniform dendritic crystals where as thin film deposited using pulse electrodeposition appeared as short,rod type loose aggregates at 10 to 50% duty cycle. The thin film obtained from pulse electrodeposition also has better surface coverage compared to the potentiostatic deposition. Data obtained from Energy Dispersive Analysis of X-rays (EDX) revealed that the composition of Sn:Se:Te was 1:5.4:2.8 and 1:7.4:3.5 respectively for both potentiostatic and pulse electrodeposition. The crystallite size of tin seleno telluride obtained from pulse electrodeposition is larger than that from potentiostatic deposition. Optical studies showed that the thin film deposited using both deposition methods have a direct band gap transition with band gap value of 1.60 e V. 2015-04 Thesis NonPeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/57067/1/FS%202015%206RR.pdf Chia, Chew Ping (2015) Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques. Masters thesis, Universiti Putra Malaysia. Electroplating Thin films Thin film devices
institution UPM IR
collection UPM IR
language English
topic Electroplating
Thin films
Thin film devices
spellingShingle Electroplating
Thin films
Thin film devices
Chia, Chew Ping
Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques
description Deposition of tin seleno telluride thin film on fluorine doped tin oxide (FTO) coated glass was successfully carried out by potentiostatic deposition and pulse electrodeposition methods. The deposition process was done in an acidic bath consisting of Sn-EDTA, Na2SeO3 and TeO2 solutions. Deposition potential was initially determined using cyclic voltammetry (CV), where the CV results indicated that the possible potential range for deposition of tin seleno telluride is between -0.35 V to -0.65 V. In potentiostatic deposition, the effect of deposition potential, annealing temperature,deposition time, bath temperature and bath concentration were studied. Comparison was done based on the results obtained from photoelectrochemical test (PEC) and Xray diffraction (XRD). It was found that tin seleno telluride thin film which was deposited for 40 minutes at -0.40 V in a deposition bath containing 0.010 M Sn-EDTA,0.010 M Na2SeO3 and 0.005 M TeO2 at room temperature exhibited the highest photocurrent and has the good crystallinity. It was also observed that the tin seleno telluride thin film was produced when the sample was annealed at 250 °C. Pulse electrodeposition was carried out for 40 minutes at a potential of -0.40 V vs Ag/AgCl in a solution containing 0.010 M Sn-EDTA, 0.010 M Na2SeO3 and 0.005 M TeO2. The sample was annealed at 250 oC for 30 minutes. The effect of varying duty cycle was studied. PEC and XRD results showed that tin seleno telluride deposited at 50% duty cycle produced a thin film with high crystallinity and good photoresponse. The photocurrent for the thin film deposited using both methods appeared at negative potentials region, revealing the fact that tin seleno telluride is a p-type semiconductor. The XRD results showed that tin seleno telluride (SnSe0.3Te0.7) is polycrystalline with strong cubic structure reflections at (002), (022), (222), (004) and (024) planes. Micrographs obtained from Scanning Electron Microscopy (SEM) showed that the thin film deposited using potentiostatic deposition appeared as non-uniform dendritic crystals where as thin film deposited using pulse electrodeposition appeared as short,rod type loose aggregates at 10 to 50% duty cycle. The thin film obtained from pulse electrodeposition also has better surface coverage compared to the potentiostatic deposition. Data obtained from Energy Dispersive Analysis of X-rays (EDX) revealed that the composition of Sn:Se:Te was 1:5.4:2.8 and 1:7.4:3.5 respectively for both potentiostatic and pulse electrodeposition. The crystallite size of tin seleno telluride obtained from pulse electrodeposition is larger than that from potentiostatic deposition. Optical studies showed that the thin film deposited using both deposition methods have a direct band gap transition with band gap value of 1.60 e V.
format Thesis
author Chia, Chew Ping
author_facet Chia, Chew Ping
author_sort Chia, Chew Ping
title Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques
title_short Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques
title_full Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques
title_fullStr Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques
title_full_unstemmed Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques
title_sort preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques
publishDate 2015
url http://psasir.upm.edu.my/id/eprint/57067/1/FS%202015%206RR.pdf
_version_ 1819297708289032192
score 13.4562235

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