Influence of B2O3 addition on the properties of TiO2 thick film at various annealing temperatures for hydrogen sensing
To increase the adhesion of thick film on a substrate, boron oxide (B2O3) was added to titanium dioxide (TiO2), and the change in the morphology, crystallinity and band gap of TiO2 thick film was investigated. TiO2 and TiO2-B2O3 pastes were prepared and deposited on the microscopic glass using scree...
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| Những tác giả chính: | , , , , , |
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| Định dạng: | Bài viết |
| Ngôn ngữ: | English |
| Được phát hành: |
Springer
2020
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| Truy cập trực tuyến: | http://psasir.upm.edu.my/id/eprint/89353/1/Influence%20of%20B2O3%20addition%20on%20the%20properties%20of%20TiO2%20thick%20film%20at%20various%20annealing%20temperatures%20for%20hydrogen%20sensing.pdf |
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| Tóm tắt: | To increase the adhesion of thick film on a substrate, boron oxide (B2O3) was added to titanium dioxide (TiO2), and the change in the morphology, crystallinity and band gap of TiO2 thick film was investigated. TiO2 and TiO2-B2O3 pastes were prepared and deposited on the microscopic glass using screen-printing technique and then annealed under air at different temperatures of 400°C, 450°C and 500°C for 30 min. The morphology, elemental composition, structure and absorption of the thick films were characterized using FESEM, EDX, XRD and UV–visible spectroscopy. The TiO2 and TiO2-B2O3 thick films were fabricated as gas sensors and exposed to 100–1000 ppm of hydrogen at an operating temperature of 300°C. The results revealed that the addition of B2O3 increased the crystallinity of anatase phases and rutile phases in TiO2 as annealing temperature increased. The TiO2-B2O3(T500) gas sensor exhibited the highest response to various concentrations of hydrogen (100–1000 ppm) at an operating temperature of 300°C. |
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