SiGe, GaAs, and InP heterojunction bipolar transistors /
Saved in:
Main Author: | |
---|---|
Format: | Book |
Language: | English |
Published: |
New York :
John Wiley,
1999.
|
Series: | Wiley series in microwave and optical engineering.
|
Subjects: | |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
LEADER | 00932nam a2200241 a 4500 | ||
---|---|---|---|
001 | vtls000302970 | ||
003 | UPM | ||
005 | 20161022011417.0 | ||
008 | 040416s1999 nyu a 001 0 eng d | ||
020 | |a 0471197467(cloth : alk. paper) | ||
039 | 9 | |a 200804290623 |b VLOAD |c 200606221536 |d mgr |c 200405310918 |d azana |c 200405310915 |d azana |y 200404161611 |z sazali | |
040 | |c UPM | ||
090 | 0 | 0 | |a TK7871.96 B55Y94 |
100 | 1 | |a Yuan, Jiann S., |d 1959- . | |
245 | 1 | 0 | |a SiGe, GaAs, and InP heterojunction bipolar transistors / |c Jiann S. Yuan. |
260 | |a New York : |b John Wiley, |c 1999. | ||
300 | |a 463p. : |b ill. ; |c 24cm. | ||
490 | 0 | |a Wiley series in microwave and optical engineering. | |
650 | 0 | |a Bipolar transistors. | |
650 | 0 | |a Junction transistors. | |
942 | |2 lcc |c 10000 | ||
999 | |c 228260 |d 228260 | ||
952 | |0 0 |1 0 |4 0 |6 TK787196 B55 Y94 |7 0 |9 348382 |a 10000 |b 10000 |c 10000 |d 2016-10-22 |o TK7871.96 B55Y94 |p 1000526724 |r 2016-10-22 |w 2016-10-22 |y 10000 |