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Fowler-Nordheim Field Emission Effects in Semiconductor Nanostructures /

This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3,...

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Bibliographic Details
Main Authors: Bhattacharya, Sitangshu. (Author, http://id.loc.gov/vocabulary/relators/aut), Ghatak, Kamakhya Prasad. (http://id.loc.gov/vocabulary/relators/aut)
Corporate Author: SpringerLink (Online service)
Format: Electronic eBook
Language:English
Published: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2012.
Edition:1st ed. 2012.
Series:Springer Series in Solid-State Sciences, 170
Subjects:
Semiconductors.
Optical materials.
Electronic materials.
Nanotechnology.
Nanoscale science.
Nanoscience.
Nanostructures.
Microwaves.
Optical engineering.
Optical and Electronic Materials.
Nanoscale Science and Technology.
Microwaves, RF and Optical Engineering.
Online Access:https://doi.org/10.1007/978-3-642-20493-7
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https://doi.org/10.1007/978-3-642-20493-7

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