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Enhanced photoelectrochemical performance of Bi2S3/Ag2S/ZnO novel ternary heterostructure nanorods

The current work investigates the morphology, crystallinity and photoelectrochemical (PEC) performance of bismuth sulfide/silver sulfide/zinc oxide nanorods (Bi2S3/Ag2S/ZnO NRAs) photoelectrodes as prepared at different annealing temperature. ZnO NRAs was initially grown hydrothermally, deposited in...

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Asıl Yazarlar: Al-Zahrani, Asla Abdullah, Zainal, Zulkarnain, Talib, Zainal Abidin, Lim, Hong Ngee, Holi, Araa Mebdir, Baharudin, Noor Nazihah
Materyal Türü: Makale
Dil:English
Baskı/Yayın Bilgisi: Elsevier 2020
Online Erişim:http://psasir.upm.edu.my/id/eprint/88803/1/ZNO.pdf
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spelling oai:psasir.upm.edu.my:88803 http://psasir.upm.edu.my/id/eprint/88803/ Enhanced photoelectrochemical performance of Bi2S3/Ag2S/ZnO novel ternary heterostructure nanorods Al-Zahrani, Asla Abdullah Zainal, Zulkarnain Talib, Zainal Abidin Lim, Hong Ngee Holi, Araa Mebdir Baharudin, Noor Nazihah The current work investigates the morphology, crystallinity and photoelectrochemical (PEC) performance of bismuth sulfide/silver sulfide/zinc oxide nanorods (Bi2S3/Ag2S/ZnO NRAs) photoelectrodes as prepared at different annealing temperature. ZnO NRAs was initially grown hydrothermally, deposited in sequence with Ag2S and Bi2S3 via successive ionic layer adsorption and reaction (SILAR) method before undergoing the annealing treatment. The optimised photoelectrode (Bi2S3/Ag2S/ZnO NRAs-400 °C) possesses an optical bandgap of 1.60 eV extending the absorption edge of ZnO to visible light spectrum. The current-voltage characterization of Bi2S3/Ag2S/ZnO NRAs photoelectrodes revealed that the photocurrent density and photoconversion efficiency were strongly dependent on the annealing temperature. The PEC study shows that the photoelectrode annealed at 400 °C achieved impressive photocurrent density of 12.95 mA/cm2 at +0.5 V (vs Ag/AgCl/saturated KCl) under 100 mW/cm2 illumination with superior photoconversion efficiency of 12.63%. This improvement is due to the cascade-designed band structure alignment of Bi2S3/Ag2S/ZnO/ITO and to the brilliant role of Ag2S as an intermediate layer that reduced random chance of electron-hole (e−-h+) pairs recombination and improved the electrons collection efficiency. This work is highly anticipated to give contribution on further utilisation of Bi2S3/Ag2S/ZnO NRAs as a promising semiconductor material in PEC related applications. Elsevier 2020 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/88803/1/ZNO.pdf Al-Zahrani, Asla Abdullah and Zainal, Zulkarnain and Talib, Zainal Abidin and Lim, Hong Ngee and Holi, Araa Mebdir and Baharudin, Noor Nazihah (2020) Enhanced photoelectrochemical performance of Bi2S3/Ag2S/ZnO novel ternary heterostructure nanorods. Arabian Journal of Chemistry, 13 (12). 9166 - 9178. ISSN 1878-5352 https://www.sciencedirect.com/science/article/pii/S1878535220304469 10.1016/j.arabjc.2020.10.040
institution UPM IR
collection UPM IR
language English
description The current work investigates the morphology, crystallinity and photoelectrochemical (PEC) performance of bismuth sulfide/silver sulfide/zinc oxide nanorods (Bi2S3/Ag2S/ZnO NRAs) photoelectrodes as prepared at different annealing temperature. ZnO NRAs was initially grown hydrothermally, deposited in sequence with Ag2S and Bi2S3 via successive ionic layer adsorption and reaction (SILAR) method before undergoing the annealing treatment. The optimised photoelectrode (Bi2S3/Ag2S/ZnO NRAs-400 °C) possesses an optical bandgap of 1.60 eV extending the absorption edge of ZnO to visible light spectrum. The current-voltage characterization of Bi2S3/Ag2S/ZnO NRAs photoelectrodes revealed that the photocurrent density and photoconversion efficiency were strongly dependent on the annealing temperature. The PEC study shows that the photoelectrode annealed at 400 °C achieved impressive photocurrent density of 12.95 mA/cm2 at +0.5 V (vs Ag/AgCl/saturated KCl) under 100 mW/cm2 illumination with superior photoconversion efficiency of 12.63%. This improvement is due to the cascade-designed band structure alignment of Bi2S3/Ag2S/ZnO/ITO and to the brilliant role of Ag2S as an intermediate layer that reduced random chance of electron-hole (e−-h+) pairs recombination and improved the electrons collection efficiency. This work is highly anticipated to give contribution on further utilisation of Bi2S3/Ag2S/ZnO NRAs as a promising semiconductor material in PEC related applications.
format Article
author Al-Zahrani, Asla Abdullah
Zainal, Zulkarnain
Talib, Zainal Abidin
Lim, Hong Ngee
Holi, Araa Mebdir
Baharudin, Noor Nazihah
spellingShingle Al-Zahrani, Asla Abdullah
Zainal, Zulkarnain
Talib, Zainal Abidin
Lim, Hong Ngee
Holi, Araa Mebdir
Baharudin, Noor Nazihah
Enhanced photoelectrochemical performance of Bi2S3/Ag2S/ZnO novel ternary heterostructure nanorods
author_facet Al-Zahrani, Asla Abdullah
Zainal, Zulkarnain
Talib, Zainal Abidin
Lim, Hong Ngee
Holi, Araa Mebdir
Baharudin, Noor Nazihah
author_sort Al-Zahrani, Asla Abdullah
title Enhanced photoelectrochemical performance of Bi2S3/Ag2S/ZnO novel ternary heterostructure nanorods
title_short Enhanced photoelectrochemical performance of Bi2S3/Ag2S/ZnO novel ternary heterostructure nanorods
title_full Enhanced photoelectrochemical performance of Bi2S3/Ag2S/ZnO novel ternary heterostructure nanorods
title_fullStr Enhanced photoelectrochemical performance of Bi2S3/Ag2S/ZnO novel ternary heterostructure nanorods
title_full_unstemmed Enhanced photoelectrochemical performance of Bi2S3/Ag2S/ZnO novel ternary heterostructure nanorods
title_sort enhanced photoelectrochemical performance of bi2s3/ag2s/zno novel ternary heterostructure nanorods
publisher Elsevier
publishDate 2020
url http://psasir.upm.edu.my/id/eprint/88803/1/ZNO.pdf
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score 13.4562235

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